Education and Science Department of Ukraine
National Academy of Sciences of UkraineAcademy of Sciences of Russia
Ukrainian Vacuum Society
Union of Metal Scientists and Thermists of Ukraine
National Science Center “Kharkiv Institute of Physics and Technology”
Sumy State University
Sumy Joint Stock Company “Nasosenergomash
”Kharkiv House of Science and Engineering

Dedicated to the centenary of
Academician K.D. Sinel
' nikov birthday

International Symposiums:

4th International Symposium “Vacuum Technologies and Equipment”
12th International Symposium
“Thin Films in Electronics”
7th International Symposium
“Pure metals”

* 61108, Ukraine, Kharkiv, p/o box 10363

E-mail: v.shulayev@kipt.kharkov.ua,

vacuum_org@kipt.kharkov.ua

( +380 (572) 35-25-45, 14-91-26

Phone/fax 35-35-29

http://www.kipt.kharkov.ua

ISVTE -- 4
ISTFE --12
ISPM -- 7

"Vacuum Technologies and Equipment"
"Thin Films in Electronics"
"Pure Metals"
April 23--27 2001, Kharkiv, Ukraine

First announcement, Zip of Word file, 73KB

The second announcement about International Symposiums in Kharkov
will be sent for registered participants.

Please fill the next Registration Form and press Submit button.

Registration Form
Subject:
Title Eng. DR Prof. Mr. Ms/Miss
Full Name
Participation with report without report
Date of Birth
Institution,
Organization
Address
City
State/County
Post code
Country
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E-mail
Comments
Date

or


61108, Ukraine, Kharkov, POB 10363
E-mail:v.shulayev@kipt.kharkov.ua
vacuum_org@kipt.kharkov.ua
Phone:(38 0572) 35-25-45, 14-91-26
Fax:(38 0572) 35-35-29
IS-2001 secretary: ZALKIND Tatiana Viktorovna

Organizational Committee

Chairman: V.I. Lapshin (Ukraine, Kharkiv)
Co-Chairmen: V.T. Cherepin (Ukraine, Kiev)
G.G. Devyatykh (Russia, Nizhny Novgorod)
S.V. Svechnikov (Ukraine, Kiev)
Vice-Chairman: V.M. Shulayev (Ukraine, Kharkiv)
Secretary of Symposia: T.V. Zalkind (Ukraine, Kharkiv)

Organizational Committee Members

V.M. Azhazha (Ukraine, Kharkiv)
A.A. Andreev (Ukraine, Kharkiv)
V.A. Belous (Ukraine, Kharkiv)
A.F. Balyanin (Russia, Moscow)
A.P. Berdnik (Ukraine, Kharkiv)
V.N. Vîevodin (Ukraine, Kharkiv)
A.V. Volobuev (Ukraine, Kharkiv)
Ya.G. Kalinichenko (Ukraine, Kharkiv)
G.P. Kovtun (Ukraine, Kharkiv)
V.S. Kogan (Ukraine, Kharkiv)
V.A. Kravchenko (Ukraine, Kharkiv)
A.I. Kuzmichev (Ukraine, Kiev)
B.A. Lyashenko (Ukraine, Kiev)
V.A.Mikhailov (Ukraine, Kharkiv)
I.M. Neklyudov (Ukraine, Kharkiv)
S.B. Nesterov (Russia, Moscow)
I.A. Protsenko (Ukraine, Sumy)
A.T. Pugachov (Ukraine, Kharkiv)
V.A. Saenko (Ukraine, Kiev)
A.V. Semenov (Ukraine, Kharkiv)
V.V. Sleptsov (Russia, Moscow)
V.E. Strel¢ nitsky (Ukraine, Kharkiv)
Yu.F. Shmal¢ko (Ukraine, Kharkiv)
V.B. Yuferov (Ukraine, Kharkiv)

ISVTE-4 International Program Committee

N.I. Aizatsky (Ukraine, Kharkiv)
V.V. Abraimov (Ukraine, Kharkiv)
I.I. Aksyonov (Ukraine, Kharkiv)
S. Berg (Sweden, Upsala)
B.I. Bondarenko (Ukraine, Kiev)
B.V. Borts (Ukraine, Kharkiv)
A.V. Demchishin (Ukraine, Kiev)
A.N. Dovbnia (Ukraine, Kharkiv)
A.M. Yegerev (Ukraine, Kharkiv)
V.I. Zmiy (Ukraine, Kharkiv)
I.M. Karnaukhov (Ukraine, Kharkiv)

G.N. Kartmazov (Ukraine, Kharkiv)
B.G. Lazarev (Ukraine, Kharkiv)
G. Musa (Romania, Bucharest)
Yu.V. Panfilov (Russia, Moscow)
L.N. Rozanov (Russia, St.-Petersburg)
V.I. Teryoshin (Ukraine, Kharkiv)
M.V. Sosipatrov (Ukraine, Kharkiv)
N.I. Sotnik (Ukraine, Sumy)
G. Sundararajan (India, Haidarabad)
H. Ehrich (Germany, Essen)

ISTFE-12 International Program Committee

P.I. Belobrov (Russia, Krasnoyarsk)
B.T. Boyko (Ukraine, Kharkiv)
P. Giellisse (USA, Florida)
N.T. Gladkikh (Ukraine, Kharkiv)
Yu.I. Gorobets (Ukraine, Kiev)
S.I. Denisîv (Ukraine, Sumy)
J. Davidson (USA, Nashville
Z.Z. Zymen (Ukraine, Kharkiv)
V.M. Ievlev (Russia, Voronezh)
Yu.S. Kaganovsky (Israel)
V.M. Kosevich (Ukraine, Kharkiv)
P.V. Mel¢nik (Ukraine, Kiev)
S. Mitura (Poland, Lodz)
I.M. Mikhailovski (Ukraine, Kharkiv)
G. Mueller (Germany, Wuppertal)
A.I. Popov (Russia, Moscow)
M. Prelas (USA, Columbia)
V.M. Puzikov (Ukraine, Kharkiv)
V.G. Ralchenko (Russia, Moscow)
M.I. Samoilovich (Russia, Alexandrov)
A.P. Semenov (Russia, Ulan-Ude)
V.S. Solovyov (Belarus, Minsk)
B.V. Spitsyn (Russia, Moscow)
Z.V. Stasyuk (Ukraine, Lviv)
V.I. Trefimov (Russia, Moscow)
M.D. Freik (Ukraine, Ivano-Frankovsk)
V.A. Khvorost (Ukraine, Sumy)
A.E. Yunovich (Russia, Moscow)

ISPM-7 International Program Committee

N.A. Azarenkov (Ukraine, Kharkiv)
V.O. Atamanenko (Ukraine, Kiev)

V.G. Bar
¢yakhtar (Ukraine, Kiev)
A.B. Blank (Ukraine, Kharkiv)

V.I. Bol
¢ shakov (Ukraine, Dnepropetrovsk)
Vad. I. Bol¢shakov (Ukraine, Dnepropetrovsk)
G.S. Burkhanov (Russia, Moscow)
B.G. Gribov (Russia, Moscow)
V.B. Grinyov (Ukraine, Kharkiv)
L.I. Deyneko (Ukraine, Dnepropetrovsk)
A.V. Elyutin (Russia, Moscow)
V.F. Zelensky (Ukraine, Kharkiv)
N.V. Kamyshanchenko (Russia, Belgorod)
Yu.N. Koval (Ukraine, Kiev)
L.F. Kozin (Ukraine, Kiev)
V.I. Lakomsky (Ukraine, Kiev)
N.P. Lyakishev (Russia, Moscow)
B.A. Meresov (Ukraine, Kharkiv)
B.A. Movchan (Ukraine, Kiev)
A.P. Mukhachov (Ukraine, Dneprodzerzhinsk)
V.L. Naidek (Ukraine, Kiev)
V.V. Nemoshkalenko (Ukraine, Kiev)
Leo Ovsiatzky (USA, STCU)
S.P. Oshkadyorov (Ukraine, Kiev)
I.K. Pokhodnia (Ukraine, Kiev)
Yu.M. Ryabukhin (Ukraine, Zàporizhzha)
V.P. Seminozhenko (Ukraine, Kharkiv)
Yu.N. Taran-Zhovnir (Ukraine, Dnepropetrovsk)
V.I. Trefilov (Ukraine, Kiev)
S.I. Firstov (Ukraine, Kiev)
A.P. Chernov (Ukraine, Kiev)

DEAR COLLEAGUE,

The Organizational Committee invites you to participate in "ISVTE-4", "ISTFE-12", "ISPM-7" symposia, which will be held on April 23-27, 2001, in Kharkiv.

Manner of participation:

  • with a presentation of a report;
  • listener, without a presentation of a report.

The whole program is subdivided into plenary sessions, sectional sessions and poster sessions.

General Information

Conferences and symposia on various application aspects of vacuum technologies and equipment in different branches of science and industry are being regularly held in Kharkiv for more than twenty years. Their most significant feature lies in creating conditions for contacts between science and industry workers for the purpose of quickest introduction of the latest results of researchers and engineering developments into industry.

Kharkiv, being the former capital of Ukraine, is the second largest city, following Kiev. It is a large industrial, scientific and cultural center of the country. There is an international airport connected with numerous cities of Europe and America.

The National Science Center “Kharkiv Institute of Physics and Technology” (NSC KIPT) is the oldest scientific center in Ukraine. In 1998 it celebrated its seventieth anniversary. World known scientists and specialists used to work here, and many talented scientists keep working now.

So, it was considered expedient to hold here in 2000 the 12th International Symposium “Thin Films in Electronics” in parallel with a satellite 4th International Symposium “Vacuum technologies and Equipment”, , and also the 7th International Symposium Pure metals.

Scientific programs

4th International Symposium “Vacuum Technologies and Equipment

Vacuum science

  • chemical and physical phenomena in vacuum, at the surface of solids, within metallic gas getters and gas-permeable membranes;
  • vacuum properties of materials;
  • mechanical oil-free pumping method;
  • latest methods of obtaining low and extremely low pressures;
  • vacuum measurements and tests.

Vacuum system elements

  • materials for vacuum systems;
  • vacuum-tight joints;
  • apparatus for locking and regulation;
  • vacuum chambers;
  • structural elements of vacuum chambers;
  • vacuum pumps;
  • inert gases deep purification systems.

Vacuum plants, systems and complexes

  • industrial vacuum plants, systems and technological complexes;
  • complexes for imitation of outer space factors;
  • gas-stream UV and soft X-ray radiation sources.

Vacuum metallurgy

  • ultra-high vacuum in metallurgical technologies;
  • deformation technologies in vacuum (rolling, pressing, drawing, etc.);
  • thermomechanical treatment in vacuum;

Cryovacuum engineering

  • cryocondensation, cryosorbtion and cryotrapping;
  • cryopump calculation ;
  • practical implementation of cryopumps;
  • cryovacuum technology applications.

Development and application of vacuum technologies in industry

  • vacuum technologies for obtaining thin-film functional materials;
  • vacuum technologies for obtaining special-purpose and decorative coatings;
  • vacuum technologies for acceleration and thermonuclear investigations;
  • practical aspects of vacuum technologies application in various branches of industry.

12th International Symposium “Thin Films in Electronics”

will be held in two directions: thin film technologies for electronics, diamond films and films of related materials.

Thin Film Technologies

Thin films

  • vacuum methods for obtaining thin films, including organic films;
  • multi-layered films;
  • growth mechanism and structure of thin films;
  • phase boundary structure of thin films;
  • physical and mechanical properties of thin films.
Nanotechnology

  • nanodimensional films, nanostructures, quasi-crystalline films;
  • obtaining surfaces with prescribed structure;
  • investigation into properties of gas-stream-produced clusters.

Diamond Films and Films of Related Materials

Deposition and growth of thin diamond films and films of related materials (diamond-like, fulleren, diamond-like nitride films, etc.)

  • high- and low-pressure synthesis, including micro-wave, radio frequency, plasma-torch, hot-filament, flame-burning, , CVD, PVD, laser-inducted deposition, modification processes of thin-film materials (surfaces), hybrid processes;
  • simulation of growth mechanisms.
Doping, modification and processing of films

  • investigation of natural, synthetic and CVD diamond by means of optical absorption, luminescence methods, Raman spectroscopy, electron and X-ray diffraction and topography, electron spin resonance, EELS, TEM;
  • investigation of Hall effect and electrical conduction;
  • investigation of inclusions in natural and synthetic diamond;
  • investigation of hardness, friction and wear;
  • polishing, grinding and lapping;
  • adherence; corrosion resistance;
  • radiation damage-induced defects ;
  • isotopic and elementary analysis.
Application of films

  • active semiconductor devices, optical-electronic switches, thermal substrates, thermal control;
  • antireflection coatings, protective coatings, light-emitting devices, lithographic masks;
  • cutting tools, abrasive, drills.
Tendencies for development

  • elucidation of possible trends of diamond technology development;
  • evaluation of existing markets and prospects for future applications and market rise;
  • new applications of diamond.

7th International Symposium “Pure metals”

Obtaining of high-purity metals and alloys

  • methods of deep purification of metals;
  • obtaining of single crystals;
  • production technologies.
High-purity substances in electronics

  • high-purity materials for electronic device engineering;
  • deep purification of auxiliary materials in electronic device technologies;
High-purity metals and alloys for nuclear and thermonuclear power industry
High-purity metals and their isotopes in medicine
Physical and nuclear-physical methods of elemental analysis of admixtures in high-purity metals and àlloys
Structure features and physical properties of high-purity metals and àlloys

 

Publications

The Proceedings of all symposia, will be published by the beginning of symposia and all the participants will receive a bound copy of the Proceedings.Official languages: Ukrainian, Russian, and English.

Instructions for Submission of Reports

Reports must include experimental or theoretical results or review information never published before.
Reports with original information must not exceed five typewritten pages, review reports – ten pages, including abstract, tables and figures.

Report Layout

Manuscripts should be presented in two copies, arranged in accordance with the example attached . They must be prepared for direct reproduction. The second copy must have signatures of all the authors.

The manuscript, including tables and figures, has to be supplied with a 1.44 MB diskette containing the report file edited in Microsoft Word
Instead of the diskette, the report file may be sent by e-mail, this being more preferable.

In case of presenting the report in Ukrainian or Russian, the title, the names of the authors, the name and the address of the organization, and the abstract as well must be translated into English and inserted at the end of the report.

Figures and photos must be scanned with a sufficiently high resolution and be inserted into the text. Avoid using wide colour (gray-shade) gamma so that the volume of figures should be below several hundred kilobytes.

Use the built-in formula editor for composing equations and formulas. Using character graphics for preparing tables is not allowed.

The reports that do not meet the requirements mentioned above will be rejected.

The materials sent out will not be returned.

Submission of papers

The papers submitted to the Organizational Committee of the symposia should include the following :

  • the report with the main reporter indicated, and arranged in accordance with the example given;
  • information on authors: (full name, date of birth, name of organization (firm), position, degree and academic rank; home and office addresses with ZIP code, phone, fax, e-mail);
  • registration form of participant (enclosed below).

please pass this information to your colleagues.

Registration form of the symposium participant
Surname _____________________________________________________
Name(s) ______________________________________________________
Manner of participation in the symposia (reporter or listener) ____________
Date of birth ___________________________________________________
Appointment, degree/rank ________________________________________
Organization/firm _______________________________________________
Address of organization/firm ______________________________________
Home address _________________________________________________

Phone ________________________________ Fax ___________________

E-mail _______________________________________________________

The registration form and report(s) must be sent at the address mentioned below by no later than December 31, 2000
by any means of communication – fax, E-mail, mail. Provided this term is satisfied, the second announcement about participation conditions will be sent at your address.

Correspondence address:

* 61108, Ukraine, Kharkiv, p/o box 10363
E-mail: v.shulayev@kipt.kharkov.ua
vacuum_org@kipt.kharkov.ua
Phone: +380 (572) 35-25-45, 14-91-26
fax: +380 (572) 35-35-29
Example of Report Design
report title
J. P. Smith
(Organization/Firm, City, Country)

Abstract (100 words at most): Times New Roman font; size 10 pt; normal italics ; justified alignment; paragraph indention 0.6 cm)

1. first level subheading title

1.1. Second level subheading title

Page format: A4 (297x210 mm). Title and subheadings are set up in capitals. Report title, authors names, organization/firm and abstract are arranged in one column. The main text is arranged in two columns, column width is 8.2 cm, space between columns is 0.6 cm. Arrangement of large figures, formulas and tables in one column is acceptable. Page layout. Margins: left 2.5 cm, right 1.5 cm, top 2.5 cm, bottom 2.5 cm. Times New Roman font, single spacing. Report title: size 14 pt; bold type; no indent; center alignment. Author, organization/firm: font size 12 pt; bold italics; no indents; center alignment.
Text of report: font size 10 pt; normal type; paragraph indention 0,6 cm; justified alignment. Use only soft hyphens in typesetting (hyphen with Ctrl button). Use strict space (Ctrl+Shift+space) between the value and its unit of measurement.
First level subheading title: font size 11 pt; bold type; no indents; center alignment.
Second level subheading title: font size 10 pt; bold type; no indents; center alignment.
Figure caption: font size 10 pt; normal italics; no indents; center alignment.

Fig. 1. Figure caption

References: font size 10 pt; normal type; no indents ; justified alignment. References to unpublished materials are not acceptable.An example of reference list is given below.
REFERENCES
1. N.V. Samokhvalov, V.E. Strelnitskij, V.A. Belous et al. //Diamond and Related Materials, 1995, v.4, p.964.
2. I.I. Aksenov, V.M. Khoroshikh. Proc. of the 17th ISDEIV, Berkeley, California, 1998, p.100.